Packaged \beta-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties
Recently, gallium oxide (Ga_2O_3) has attracted great interest as a material for efficient power devices. Yet, experimental studies rather concentrate on the investigation of bare dies and lack the analysis of devices in industry-standard packages. Furthermore, while Ga_2O_3 trench MOS Schottky barr...
Gespeichert in:
| Veröffentlicht in: | IEEE transactions on power electronics 2022-04, Vol.37 (4), p.3737-3742 |
|---|---|
| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 3742 |
|---|---|
| container_issue | 4 |
| container_start_page | 3737 |
| container_title | IEEE transactions on power electronics |
| container_volume | 37 |
| creator | Wilhelmi, Florian Kunori, Shinji Sasaki, Kohei Kuramata, Akito Komatsu, Yuji Lindemann, Andreas |
| description | Recently, gallium oxide (Ga_2O_3) has attracted great interest as a material for efficient power devices. Yet, experimental studies rather concentrate on the investigation of bare dies and lack the analysis of devices in industry-standard packages. Furthermore, while Ga_2O_3 trench MOS Schottky barrier diodes (SBDs) appear to be promising candidates, temperature-dependent measurements previously revealed inhomogeneous junctions. In this letter, a vertical \beta-Ga_2O_3 trench MOS SBD is presented. The diode exhibits a homogeneous Schottky junction and nearly ideal thermionic current flow. This indicates better junction properties than previously observed for trench as well as non-trench Ga_2O_3 SBDs, with only a slight influence of interface states at high temperatures. As a next step toward application, the chip is successfully bonded in an industry-standard TO-247 package. The molded discrete is operational at low temperatures of −50 °C and up to high temperatures of 150 °C while exhibiting a lower increase in on -resistance with rising temperature than SiC Schottky diodes. |
| doi_str_mv | 10.1109/TPEL.2021.3122902 |
| format | Article |
| fullrecord | <record><control><sourceid>ieee_RIE</sourceid><recordid>TN_cdi_ieee_primary_9591274</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>9591274</ieee_id><sourcerecordid>9591274</sourcerecordid><originalsourceid>FETCH-LOGICAL-i105t-5e61393be9813133abb26eb0dbab12ebaf4857c1cf5a4037257de4f8ef0840ac3</originalsourceid><addsrcrecordid>eNotzM1OAjEQAODGaCKiD2C89AUWZ_rDtkeDiBgUEtZ4MSHT7qxUkDW79cDbe9DTd_uEuEYYIYK_rVbTxUiBwpFGpTyoEzFAb7AAhPJUDMA5Wzjv9bm46PtPADQWcCCqFcUdfXAt3wNnKmakllpWHR_iVj4v13Idt23Ou6O8T23N8i3lrXxh6vZHOa-Z9vLp5xBzag9y1bXf3OXE_aU4a2jf89W_Q_H6MK0mj8ViOZtP7hZFQrC5sDxG7XVg71Cj1hSCGnOAOlBAxYEa42wZMTaWDOhS2bJm0zhuwBmgqIfi5u9NzLz57tIXdceNtx5VafQvxmlO2A</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Packaged \beta-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties</title><source>IEEE Electronic Library (IEL)</source><creator>Wilhelmi, Florian ; Kunori, Shinji ; Sasaki, Kohei ; Kuramata, Akito ; Komatsu, Yuji ; Lindemann, Andreas</creator><creatorcontrib>Wilhelmi, Florian ; Kunori, Shinji ; Sasaki, Kohei ; Kuramata, Akito ; Komatsu, Yuji ; Lindemann, Andreas</creatorcontrib><description><![CDATA[Recently, gallium oxide (Ga<inline-formula><tex-math notation="LaTeX">_2</tex-math></inline-formula>O<inline-formula><tex-math notation="LaTeX">_3</tex-math></inline-formula>) has attracted great interest as a material for efficient power devices. Yet, experimental studies rather concentrate on the investigation of bare dies and lack the analysis of devices in industry-standard packages. Furthermore, while Ga<inline-formula><tex-math notation="LaTeX">_2</tex-math></inline-formula>O<inline-formula><tex-math notation="LaTeX">_3</tex-math></inline-formula> trench MOS Schottky barrier diodes (SBDs) appear to be promising candidates, temperature-dependent measurements previously revealed inhomogeneous junctions. In this letter, a vertical <inline-formula><tex-math notation="LaTeX">\beta</tex-math></inline-formula>-Ga<inline-formula><tex-math notation="LaTeX">_2</tex-math></inline-formula>O<inline-formula><tex-math notation="LaTeX">_3</tex-math></inline-formula> trench MOS SBD is presented. The diode exhibits a homogeneous Schottky junction and nearly ideal thermionic current flow. This indicates better junction properties than previously observed for trench as well as non-trench Ga<inline-formula><tex-math notation="LaTeX">_2</tex-math></inline-formula>O<inline-formula><tex-math notation="LaTeX">_3</tex-math></inline-formula> SBDs, with only a slight influence of interface states at high temperatures. As a next step toward application, the chip is successfully bonded in an industry-standard TO-247 package. The molded discrete is operational at low temperatures of −50 °C and up to high temperatures of 150 °C while exhibiting a lower increase in on -resistance with rising temperature than SiC Schottky diodes.]]></description><identifier>ISSN: 0885-8993</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2021.3122902</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>IEEE</publisher><subject><![CDATA[Ga<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _2</tex-math> </inline-formula>O<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _3</tex-math> </inline-formula> ; Gallium ; Junctions ; package ; power semiconductor devices ; Schottky barriers ; Schottky diodes ; Silicon carbide ; Temperature ; TO-247 ; trench MOS ; Voltage]]></subject><ispartof>IEEE transactions on power electronics, 2022-04, Vol.37 (4), p.3737-3742</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0002-8923-7703 ; 0000-0002-0640-7245</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9591274$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27905,27906,54739</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9591274$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Wilhelmi, Florian</creatorcontrib><creatorcontrib>Kunori, Shinji</creatorcontrib><creatorcontrib>Sasaki, Kohei</creatorcontrib><creatorcontrib>Kuramata, Akito</creatorcontrib><creatorcontrib>Komatsu, Yuji</creatorcontrib><creatorcontrib>Lindemann, Andreas</creatorcontrib><title>Packaged \beta-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties</title><title>IEEE transactions on power electronics</title><addtitle>TPEL</addtitle><description><![CDATA[Recently, gallium oxide (Ga<inline-formula><tex-math notation="LaTeX">_2</tex-math></inline-formula>O<inline-formula><tex-math notation="LaTeX">_3</tex-math></inline-formula>) has attracted great interest as a material for efficient power devices. Yet, experimental studies rather concentrate on the investigation of bare dies and lack the analysis of devices in industry-standard packages. Furthermore, while Ga<inline-formula><tex-math notation="LaTeX">_2</tex-math></inline-formula>O<inline-formula><tex-math notation="LaTeX">_3</tex-math></inline-formula> trench MOS Schottky barrier diodes (SBDs) appear to be promising candidates, temperature-dependent measurements previously revealed inhomogeneous junctions. In this letter, a vertical <inline-formula><tex-math notation="LaTeX">\beta</tex-math></inline-formula>-Ga<inline-formula><tex-math notation="LaTeX">_2</tex-math></inline-formula>O<inline-formula><tex-math notation="LaTeX">_3</tex-math></inline-formula> trench MOS SBD is presented. The diode exhibits a homogeneous Schottky junction and nearly ideal thermionic current flow. This indicates better junction properties than previously observed for trench as well as non-trench Ga<inline-formula><tex-math notation="LaTeX">_2</tex-math></inline-formula>O<inline-formula><tex-math notation="LaTeX">_3</tex-math></inline-formula> SBDs, with only a slight influence of interface states at high temperatures. As a next step toward application, the chip is successfully bonded in an industry-standard TO-247 package. The molded discrete is operational at low temperatures of −50 °C and up to high temperatures of 150 °C while exhibiting a lower increase in on -resistance with rising temperature than SiC Schottky diodes.]]></description><subject><![CDATA[Ga<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _2</tex-math> </inline-formula>O<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _3</tex-math> </inline-formula>]]></subject><subject>Gallium</subject><subject>Junctions</subject><subject>package</subject><subject>power semiconductor devices</subject><subject>Schottky barriers</subject><subject>Schottky diodes</subject><subject>Silicon carbide</subject><subject>Temperature</subject><subject>TO-247</subject><subject>trench MOS</subject><subject>Voltage</subject><issn>0885-8993</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNotzM1OAjEQAODGaCKiD2C89AUWZ_rDtkeDiBgUEtZ4MSHT7qxUkDW79cDbe9DTd_uEuEYYIYK_rVbTxUiBwpFGpTyoEzFAb7AAhPJUDMA5Wzjv9bm46PtPADQWcCCqFcUdfXAt3wNnKmakllpWHR_iVj4v13Idt23Ou6O8T23N8i3lrXxh6vZHOa-Z9vLp5xBzag9y1bXf3OXE_aU4a2jf89W_Q_H6MK0mj8ViOZtP7hZFQrC5sDxG7XVg71Cj1hSCGnOAOlBAxYEa42wZMTaWDOhS2bJm0zhuwBmgqIfi5u9NzLz57tIXdceNtx5VafQvxmlO2A</recordid><startdate>202204</startdate><enddate>202204</enddate><creator>Wilhelmi, Florian</creator><creator>Kunori, Shinji</creator><creator>Sasaki, Kohei</creator><creator>Kuramata, Akito</creator><creator>Komatsu, Yuji</creator><creator>Lindemann, Andreas</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><orcidid>https://orcid.org/0000-0002-8923-7703</orcidid><orcidid>https://orcid.org/0000-0002-0640-7245</orcidid></search><sort><creationdate>202204</creationdate><title>Packaged \beta-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties</title><author>Wilhelmi, Florian ; Kunori, Shinji ; Sasaki, Kohei ; Kuramata, Akito ; Komatsu, Yuji ; Lindemann, Andreas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i105t-5e61393be9813133abb26eb0dbab12ebaf4857c1cf5a4037257de4f8ef0840ac3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic><![CDATA[Ga<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _2</tex-math> </inline-formula>O<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _3</tex-math> </inline-formula>]]></topic><topic>Gallium</topic><topic>Junctions</topic><topic>package</topic><topic>power semiconductor devices</topic><topic>Schottky barriers</topic><topic>Schottky diodes</topic><topic>Silicon carbide</topic><topic>Temperature</topic><topic>TO-247</topic><topic>trench MOS</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wilhelmi, Florian</creatorcontrib><creatorcontrib>Kunori, Shinji</creatorcontrib><creatorcontrib>Sasaki, Kohei</creatorcontrib><creatorcontrib>Kuramata, Akito</creatorcontrib><creatorcontrib>Komatsu, Yuji</creatorcontrib><creatorcontrib>Lindemann, Andreas</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><jtitle>IEEE transactions on power electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Wilhelmi, Florian</au><au>Kunori, Shinji</au><au>Sasaki, Kohei</au><au>Kuramata, Akito</au><au>Komatsu, Yuji</au><au>Lindemann, Andreas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Packaged \beta-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties</atitle><jtitle>IEEE transactions on power electronics</jtitle><stitle>TPEL</stitle><date>2022-04</date><risdate>2022</risdate><volume>37</volume><issue>4</issue><spage>3737</spage><epage>3742</epage><pages>3737-3742</pages><issn>0885-8993</issn><eissn>1941-0107</eissn><coden>ITPEE8</coden><abstract><![CDATA[Recently, gallium oxide (Ga<inline-formula><tex-math notation="LaTeX">_2</tex-math></inline-formula>O<inline-formula><tex-math notation="LaTeX">_3</tex-math></inline-formula>) has attracted great interest as a material for efficient power devices. Yet, experimental studies rather concentrate on the investigation of bare dies and lack the analysis of devices in industry-standard packages. Furthermore, while Ga<inline-formula><tex-math notation="LaTeX">_2</tex-math></inline-formula>O<inline-formula><tex-math notation="LaTeX">_3</tex-math></inline-formula> trench MOS Schottky barrier diodes (SBDs) appear to be promising candidates, temperature-dependent measurements previously revealed inhomogeneous junctions. In this letter, a vertical <inline-formula><tex-math notation="LaTeX">\beta</tex-math></inline-formula>-Ga<inline-formula><tex-math notation="LaTeX">_2</tex-math></inline-formula>O<inline-formula><tex-math notation="LaTeX">_3</tex-math></inline-formula> trench MOS SBD is presented. The diode exhibits a homogeneous Schottky junction and nearly ideal thermionic current flow. This indicates better junction properties than previously observed for trench as well as non-trench Ga<inline-formula><tex-math notation="LaTeX">_2</tex-math></inline-formula>O<inline-formula><tex-math notation="LaTeX">_3</tex-math></inline-formula> SBDs, with only a slight influence of interface states at high temperatures. As a next step toward application, the chip is successfully bonded in an industry-standard TO-247 package. The molded discrete is operational at low temperatures of −50 °C and up to high temperatures of 150 °C while exhibiting a lower increase in on -resistance with rising temperature than SiC Schottky diodes.]]></abstract><pub>IEEE</pub><doi>10.1109/TPEL.2021.3122902</doi><tpages>6</tpages><orcidid>https://orcid.org/0000-0002-8923-7703</orcidid><orcidid>https://orcid.org/0000-0002-0640-7245</orcidid></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0885-8993 |
| ispartof | IEEE transactions on power electronics, 2022-04, Vol.37 (4), p.3737-3742 |
| issn | 0885-8993 1941-0107 |
| language | eng |
| recordid | cdi_ieee_primary_9591274 |
| source | IEEE Electronic Library (IEL) |
| subjects | Ga<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _2</tex-math> </inline-formula>O<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX"> _3</tex-math> </inline-formula> Gallium Junctions package power semiconductor devices Schottky barriers Schottky diodes Silicon carbide Temperature TO-247 trench MOS Voltage |
| title | Packaged \beta-Ga2O3 Trench MOS Schottky Diode With Nearly Ideal Junction Properties |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T09%3A06%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Packaged%20%5Cbeta-Ga2O3%20Trench%20MOS%20Schottky%20Diode%20With%20Nearly%20Ideal%20Junction%20Properties&rft.jtitle=IEEE%20transactions%20on%20power%20electronics&rft.au=Wilhelmi,%20Florian&rft.date=2022-04&rft.volume=37&rft.issue=4&rft.spage=3737&rft.epage=3742&rft.pages=3737-3742&rft.issn=0885-8993&rft.eissn=1941-0107&rft.coden=ITPEE8&rft_id=info:doi/10.1109/TPEL.2021.3122902&rft_dat=%3Cieee_RIE%3E9591274%3C/ieee_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=9591274&rfr_iscdi=true |