A DCS1800/GSM900 RF to digital fully integrated receiver in SiGe 0.35 /spl mu/m BiCMOS

A DCS1800/GSM900 RF to digital fully integrated receiver in SiGe 0.35 /spl mu/m BiCMOS

The authors describe a 0.35 /spl mu/m SiGe BiCMOS RF to digital base band monochip for the DCS1800/GSM900 standard. Linked to this design, a substrate coupling study has been developed in order to prevent a noisy substrate under sensitive analog RF blocks such as Low Noise Amplifiers (LNAs).

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Bibliographische Detailangaben
Hauptverfasser: Belot, D., Bonhoure, B., Saias, D., Bertholet, N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
Distributed control
Germanium silicon alloys
Impedance
Noise figure
Noise measurement
Packaging
Radio frequency
Silicon germanium
Switches
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Beschreibung
Zusammenfassung:The authors describe a 0.35 /spl mu/m SiGe BiCMOS RF to digital base band monochip for the DCS1800/GSM900 standard. Linked to this design, a substrate coupling study has been developed in order to prevent a noisy substrate under sensitive analog RF blocks such as Low Noise Amplifiers (LNAs).
DOI:10.1109/BIPOL.2001.957863