PZT thin film bulk acoustic wave resonators and filters

PZT thin film bulk acoustic wave resonators and filters

Thin Film Bulk Acoustic Wave Resonators (FBAR) using Lead Zirconate Titanate (PZT) thin films as the piezoelectric active layer are favourable for voltage controlled oscillators and wide band filters due to the large electro-mechanical coupling coefficient of PZT. This paper reports the fabrication...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Kirby, P.B., Su, Q.X., Komuro, E., Zhang, Q., Imura, M., Whatmore, R.W.
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
Acoustic waves
Fabrication
Film bulk acoustic resonators
Piezoelectric films
Resonator filters
Temperature
Titanium compounds
Transistors
Voltage-controlled oscillators
Wideband
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Thin Film Bulk Acoustic Wave Resonators (FBAR) using Lead Zirconate Titanate (PZT) thin films as the piezoelectric active layer are favourable for voltage controlled oscillators and wide band filters due to the large electro-mechanical coupling coefficient of PZT. This paper reports the fabrication process and results of PZT FBARs and filters. The temperature coefficient and bias voltage effect are also presented.
ISSN:1075-6787
DOI:10.1109/FREQ.2001.956364