Characterization of IGCT under zero-current-transition condition

Characterization of IGCT under zero-current-transition condition

This paper characterizes the integrated gate commutated thyristor (IGCT) device under the zero-current-transition (ZCT) soft switching condition for the first time. The test results show that ZCT soft switching can dramatically reduce the turn-off loss, turn-on loss of the IGCT switch and also allev...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Motto, K., Zhang, B., Huang, A.Q.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit testing
Fault currents
Inverters
Resonance
RLC circuits
Stress
Switches
Switching circuits
Thyristors
Zero voltage switching
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Beschreibung
Zusammenfassung:This paper characterizes the integrated gate commutated thyristor (IGCT) device under the zero-current-transition (ZCT) soft switching condition for the first time. The test results show that ZCT soft switching can dramatically reduce the turn-off loss, turn-on loss of the IGCT switch and also alleviate the reverse recovery stress of the diode. The ZCT circuit is therefore suitable for increasing the current handling capabilities of IGCT devices.
ISSN:0197-2618
2576-702X
DOI:10.1109/IAS.2001.955732