Turn-off and short circuit behaviour of 4H SiC JFETs

Turn-off and short circuit behaviour of 4H SiC JFETs

In this paper, the dynamic characteristics of a SiC switching power device are described. The switch is realised as a cascode configuration, consisting of the series connection of a low voltage Si MOSFET and a high voltage SiC JFET. This switch is able to operate both as switch and as freewheeling d...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Weis, B., Braun, M., Friedrichs, P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Inverters
JFET circuits
Leg
Low voltage
MOSFET circuits
Power semiconductor switches
Semiconductor diodes
Silicon carbide
Surface resistance
Turning
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Beschreibung
Zusammenfassung:In this paper, the dynamic characteristics of a SiC switching power device are described. The switch is realised as a cascode configuration, consisting of the series connection of a low voltage Si MOSFET and a high voltage SiC JFET. This switch is able to operate both as switch and as freewheeling diode. Turn-off behaviour of this switch is reported, whereas turn-off means both turning off in "switch" operation as well as turning off in "diode" operation. Finally, short circuit operation of the switch is demonstrated.
ISSN:0197-2618
2576-702X
DOI:10.1109/IAS.2001.955445