A 16-kb Antifuse One-Time-Programmable Memory in 5-nm High-K Metal-Gate FinFET CMOS Featuring Bootstrap High-Voltage Scheme, Read Endpoint Detection, and Pseudodifferential Sensing

A 16-kb Antifuse One-Time-Programmable Memory in 5-nm High-K Metal-Gate FinFET CMOS Featuring Bootstrap High-Voltage Scheme, Read Endpoint Detection, and Pseudodifferential Sensing

This letter presents a 16-kb antifuse macro in a 5-nm high-K, metal-gate FinFET CMOS for the first time. Bootstrap high-voltage scheme (BHVS), read endpoint detection (REPD), and pseudodifferential sensing (PDS) are proposed to lower intrinsic bit error rate (BER) below 1 ppm for in-field programmin...

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Veröffentlicht in:IEEE solid-state circuits letters 2021, Vol.4, p.170-173
Hauptverfasser: Chou, Shao-Yu Shaun, Chen, Shawn, Chang, Jun-Hao, Cheng, Wan-Hsueh, Chih, Yu-Der, Fan, Philex, Huang, Chia-En, Hung, Cher-Ming, Li, Gu-Huan, Wang, Yih, Wu, Shao-Ding, Chang, Tsung-Yung Jonathan
Format: Artikel
Sprache:eng
Schlagworte:
Antifuse
Antifuses
Bit error rate
bootstrap high-voltage scheme (BHVS)
charge pump (CP)
CMOS
FinFETs
Fuses
High voltages
High-voltage techniques
Logic gates
one-time programmable (OTP)
Programming
pseudodifferential sensing (PDS)
read endpoint detection (REPD)
Resistance
Sensors
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Zusammenfassung:This letter presents a 16-kb antifuse macro in a 5-nm high-K, metal-gate FinFET CMOS for the first time. Bootstrap high-voltage scheme (BHVS), read endpoint detection (REPD), and pseudodifferential sensing (PDS) are proposed to lower intrinsic bit error rate (BER) below 1 ppm for in-field programming and achieve ten years of data retention at 125 °C.
ISSN:2573-9603
2573-9603
DOI:10.1109/LSSC.2021.3115638