Optoelectronic Readout of STT-RAM Based on Plasmon Drag Effect
An opto-electronic readout of the memory state in spin transfer torque random access memory (STT-RAM) cells is proposed. A single optical beam illuminating an array of STT-RAM cells creates electrical potential along each STT-RAM cell due to optical rectification that can be further enhanced through...
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Veröffentlicht in: | IEEE journal of quantum electronics 2021-12, Vol.57 (6), p.1-7 |
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Sprache: | eng |
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Zusammenfassung: | An opto-electronic readout of the memory state in spin transfer torque random access memory (STT-RAM) cells is proposed. A single optical beam illuminating an array of STT-RAM cells creates electrical potential along each STT-RAM cell due to optical rectification that can be further enhanced through plasmon drag effect (PLDE). Then, the photo-induced voltage is assumed to be measured by conventional electronics. Here, a theoretical modeling is performed, where the results provide an estimate of the photo-induced voltage in each memory cell and its variation with respect to the changes in state of the memory cell (parallel vs anti-parallel). Our study shows that the plasmonic enhancement facilitates {\sim } 20 times enhancement in the voltage change due to state change of the each memory cell, compared to the case of out-of-resonance excitation. This enhancement potentially improves the memory readout rate if a proper supporting electronic circuit is available. |
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ISSN: | 0018-9197 1558-1713 |
DOI: | 10.1109/JQE.2021.3112701 |