Extracting RLC Parasitics From a Flexible Electronic Hybrid Assembly Using On-Chip ESD Protection Circuits

The presence of RLC line parasitics in a flexible hybrid electronic assembly can lead to signal integrity issues, and their progression over time can lead to catastrophic failures. A technique for extracting the RLC line parasitics from a flexible hybrid electronics assembly is presented. The propos...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on circuits and systems. I, Regular papers Regular papers, 2021-10, Vol.68 (10), p.4025-4037
Hauptverfasser: Khan, Rafid Adnan, Muhaisin, Mohammad Muhtady, Roberts, Gordon W.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The presence of RLC line parasitics in a flexible hybrid electronic assembly can lead to signal integrity issues, and their progression over time can lead to catastrophic failures. A technique for extracting the RLC line parasitics from a flexible hybrid electronics assembly is presented. The proposed extraction method exploits the on-chip ESD protection circuits of an IC chip to extract the parasitics of the printed conductors bonded to the chip. This is performed through a single test access port, i.e., two test points. While the parasitics LC are extractable through one-port reflection-based techniques such as time domain reflectometry; the parasitic R requires a two-port measurement such as Kelvin test, which is extremely difficult to perform for printed conductors bonded to small surface-mount IC package devices. The accuracy of the extracted RLC parameters with the proposed method are verified with a prototype developed on a rigid FR4 substrate. Subsequently, the proposed technique is utilized to track the variation of the RLC parasitics for prototypes developed on Kapton Polyimide substrate subjected to different forms of bending.
ISSN:1549-8328
1558-0806
DOI:10.1109/TCSI.2021.3102103