Vertical Electric Field-Induced Abnormal Capacitance-Voltage Electrical Characteristics in a-InGaZnO TFTs
This study investigates an abnormal degradation induced in a moist environment. Although devices maintain optimal performance under bias stress operation in a vacuum, an abnormal hump is observed in capacitance-voltage ( {C} - {V} ) electrical characteristics under negative bias stress (NBS) operati...
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Veröffentlicht in: | IEEE transactions on electron devices 2021-09, Vol.68 (9), p.4431-4436 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | This study investigates an abnormal degradation induced in a moist environment. Although devices maintain optimal performance under bias stress operation in a vacuum, an abnormal hump is observed in capacitance-voltage ( {C} - {V} ) electrical characteristics under negative bias stress (NBS) operation in a moist environment. Electrolysis of the H 2 O model is proposed to explain the degradation. An asymmetric stress condition, with {V} _{\text {GD}} = {0} V, is designed to confirm that a vertical electric field causes the electrolysis of H 2 O, which is the reason for the hump phenomenon in the {C} - {V} curve. Moreover, COMSOL simulation and {C} - {V} measurement of the source and drain parasitic capacitances are utilized to clarify the precise degradation position and support the mechanism. The results from electrical measurement suggest that a vertical electric field can cause instability in a moist environment. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2021.3095828 |