Al/sub 2/O/sub 3/ layers for microelectronic applications

Summary form only given. The investigations concern Al/sub 2/O/sub 3/ layers produced by the reactive pulse plasma (RPP) method on semiconductor substrates (Si, SiC). The layers have been investigated both in terms of structure and electrophysical properties. We have developed a technology for produ...

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Hauptverfasser: Dusinski, E., Szmidt, J., Zdunek, K., Elert, M., Barcz, A.
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Szmidt, J.
Zdunek, K.
Elert, M.
Barcz, A.
description Summary form only given. The investigations concern Al/sub 2/O/sub 3/ layers produced by the reactive pulse plasma (RPP) method on semiconductor substrates (Si, SiC). The layers have been investigated both in terms of structure and electrophysical properties. We have developed a technology for producing MIS transistors with these layers as dielectrics, and the electrical parameters of the transistors have been defined.
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identifier ISBN: 9780780371361
ispartof 3rd International Conference 'Novel Applications of Wide Bandgap Layers' Abstract Book (Cat. No.01EX500), 2001, p.193-194
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Chemicals
Dielectric substrates
Mass spectroscopy
Microelectronics
Plasma applications
Plasma materials processing
Plasma properties
Silicon carbide
Threshold voltage
Wet etching
title Al/sub 2/O/sub 3/ layers for microelectronic applications
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