Al/sub 2/O/sub 3/ layers for microelectronic applications

Al/sub 2/O/sub 3/ layers for microelectronic applications

Summary form only given. The investigations concern Al/sub 2/O/sub 3/ layers produced by the reactive pulse plasma (RPP) method on semiconductor substrates (Si, SiC). The layers have been investigated both in terms of structure and electrophysical properties. We have developed a technology for produ...

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Bibliographische Detailangaben
Hauptverfasser: Dusinski, E., Szmidt, J., Zdunek, K., Elert, M., Barcz, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemicals
Dielectric substrates
Mass spectroscopy
Microelectronics
Plasma applications
Plasma materials processing
Plasma properties
Silicon carbide
Threshold voltage
Wet etching
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Beschreibung
Zusammenfassung:Summary form only given. The investigations concern Al/sub 2/O/sub 3/ layers produced by the reactive pulse plasma (RPP) method on semiconductor substrates (Si, SiC). The layers have been investigated both in terms of structure and electrophysical properties. We have developed a technology for producing MIS transistors with these layers as dielectrics, and the electrical parameters of the transistors have been defined.
DOI:10.1109/WBL.2001.946602