Schottky barriers for AlGaN/GaN device heterostructures

Summary form only given. The process technology of temperature-stable Schottky barrier contacts to GaN and AlGaN epitaxial layers and heterostructures was elaborated. The investigated Schottky contacts were based on Pt/Au metallization with the addition of an adhesion-improving metal interlayer. The...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Boratynski, B., Jankowski, B.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Capacitance-voltage characteristics Contacts Epitaxial layers Gallium nitride Gold Metallization Schottky barriers Temperature distribution Voltage
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