Schottky barriers for AlGaN/GaN device heterostructures

Summary form only given. The process technology of temperature-stable Schottky barrier contacts to GaN and AlGaN epitaxial layers and heterostructures was elaborated. The investigated Schottky contacts were based on Pt/Au metallization with the addition of an adhesion-improving metal interlayer. The electrical parameters of the Schottky barriers were evaluated in a range of temperatures up to 300 /spl deg/C. The potential barrier, calculated from C-V and I-V measurements, was close to 0.8 V and the ideality factor value was 1.2. Prolonged exposures to elevated temperatures, reverse DC voltage and load currents were investigated. Device structures of MSM photodetectors and HFETs with the developed contacts were fabricated and their electrical parameters have been evaluated.