A Small-Signal Description of Black-Phosphorus Transistor Technologies for High-Frequency Applications

This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorus field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2021-09, Vol.31 (9), p.1055-1058
Hauptverfasser:	Valdez, Leslie M., Ramirez-Garcia, Eloy, Park, Saungeun, Akinwande, Deji, Jimenez, David, Pacheco-Sanchez, Anibal
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Amplifier design Amplifiers Black-phosphorus field-effect transistor (BPFET) Data models Engineering Engineering, Electrical & Electronic Equivalent circuits Field effect transistors Gain High gain Integrated circuit modeling Logic gates Phosphorus Radio frequency RF amplifier Scattering parameters Science & Technology Semiconductor devices small-signal Solid modeling Technology
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