A Small-Signal Description of Black-Phosphorus Transistor Technologies for High-Frequency Applications

This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorus field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2021-09, Vol.31 (9), p.1055-1058
Hauptverfasser:	Valdez, Leslie M., Ramirez-Garcia, Eloy, Park, Saungeun, Akinwande, Deji, Jimenez, David, Pacheco-Sanchez, Anibal
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplification Amplifier design Amplifiers Black-phosphorus field-effect transistor (BPFET) Data models Engineering Engineering, Electrical & Electronic Equivalent circuits Field effect transistors Gain High gain Integrated circuit modeling Logic gates Phosphorus Radio frequency RF amplifier Scattering parameters Science & Technology Semiconductor devices small-signal Solid modeling Technology
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Beschreibung
Zusammenfassung:	This work presents a small-signal high-frequency (HF) equivalent circuit (EC) to model AC performances of black-phosphorus field-effect transistors (BPFETs). The proposed EC is able to describe correctly both the experimental HF intrinsic and extrinsic figures of merit, as well as S-parameters, from different BPFET technologies. Single- and double-stage radio frequency gain amplifiers are designed at 2.4 GHz using the experimentally calibrated small-signal BPFET EC. Results show high-gain high-selective BPFET-based amplifiers.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2021.3086047