A 264-GHz, 2.3-dBm Push-Push Transformer-Based Hartley Oscillator
A high-power subterahertz (THz) push-push oscillator topology is proposed. Adopting Hartley oscillator topology with transformer as its resonator, the proposed oscillator reduces the effective parasitic capacitance of transistors; therefore, a larger size transistor can be adopted, which increases t...
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Veröffentlicht in: | IEEE microwave and wireless components letters 2021-07, Vol.31 (7), p.893-896 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A high-power subterahertz (THz) push-push oscillator topology is proposed. Adopting Hartley oscillator topology with transformer as its resonator, the proposed oscillator reduces the effective parasitic capacitance of transistors; therefore, a larger size transistor can be adopted, which increases the output power while still maintaining the same oscillation frequency. The adoption of the transformer also improves the LC resonator's Q -factor, further improving the output power and dc-to-RF efficiency. Implemented in 65-nm CMOS technology, the measured output power of the proposed single oscillator is 2.3 dBm at 264 GHz with 2.76% dc-to-RF efficiency and −96.8 dBc/Hz of the phase noise at a 10-MHz offset. |
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ISSN: | 1531-1309 2771-957X 1558-1764 2771-9588 |
DOI: | 10.1109/LMWC.2021.3077066 |