Signal and Noise Analysis of an Open-Circuit Voltage Pixel for Uncooled Infrared Image Sensors
An imaging pixel unit-cell topology leveraging a photodetector in the forward-bias region is proposed. Connecting the anode of the photodiode to the gate of a NMOS device operating in the subthreshold region provides the basis for a new open-circuit voltage pixel (VocP) architecture. Theoretical ana...
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| creator | Fragasse, Roman Tantawy, Ramy Smith, Dale Specht, Teressa Taghipour, Zahra Hooser, Phillip V. Taylor, Chris Ronningen, Theodore J. Fuller, Earl Reyner, Charles Duran, Josh Ariyawansa, Gamini Krishna, Sanjay Khalil, Waleed |
| description | An imaging pixel unit-cell topology leveraging a photodetector in the forward-bias region is proposed. Connecting the anode of the photodiode to the gate of a NMOS device operating in the subthreshold region provides the basis for a new open-circuit voltage pixel (VocP) architecture. Theoretical analysis is presented to show the response and performance benefits of the VocP in comparison to a conventional pixel. Based on this analysis, the signal and noise relationships for both pixels are derived and leveraged to construct an end-to-end readout system model. The model results highlight potential performance benefits of the VocP over a conventional direct-injection pixel topology. To verify the analysis, the proposed VocP readout architecture is fabricated along with a conventional direct-injection pixel readout in a 0.18~\mathrm {\mu }\text{m} CMOS technology. The VocP performance is compared to a traditional reverse-bias current-mode photodetector configuration. Simulation, modeling, and measurements align with the proposed analytical model. Benefits in system sensitivity and dynamic range are demonstrated showing more than a 2\times improvement in noise-equivalent temperature difference and a 4 dB improvement in dynamic range. |
| doi_str_mv | 10.1109/TCSI.2021.3068595 |
| format | Article |
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Connecting the anode of the photodiode to the gate of a NMOS device operating in the subthreshold region provides the basis for a new open-circuit voltage pixel (VocP) architecture. Theoretical analysis is presented to show the response and performance benefits of the VocP in comparison to a conventional pixel. Based on this analysis, the signal and noise relationships for both pixels are derived and leveraged to construct an end-to-end readout system model. The model results highlight potential performance benefits of the VocP over a conventional direct-injection pixel topology. To verify the analysis, the proposed VocP readout architecture is fabricated along with a conventional direct-injection pixel readout in a <inline-formula> <tex-math notation="LaTeX">0.18~\mathrm {\mu }\text{m} </tex-math></inline-formula> CMOS technology. The VocP performance is compared to a traditional reverse-bias current-mode photodetector configuration. Simulation, modeling, and measurements align with the proposed analytical model. Benefits in system sensitivity and dynamic range are demonstrated showing more than a <inline-formula> <tex-math notation="LaTeX">2\times </tex-math></inline-formula> improvement in noise-equivalent temperature difference and a 4 dB improvement in dynamic range.]]></description><identifier>ISSN: 1549-8328</identifier><identifier>EISSN: 1558-0806</identifier><identifier>DOI: 10.1109/TCSI.2021.3068595</identifier><identifier>CODEN: ITCSCH</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Analytical models ; Bias ; CMOS ; Detectors ; Dynamic range ; HOT ; Infrared analysis ; Infrared detectors ; Infrared imagery ; Mathematical models ; MOS devices ; MWIR ; Noise ; Open circuit voltage ; open-circuit ; Partial discharges ; Photodiodes ; Photometers ; Pixels ; ROIC ; Semiconductor device modeling ; Sensitivity ; Topology ; uncooled ; Unit cell</subject><ispartof>IEEE transactions on circuits and systems. I, Regular papers, 2021-05, Vol.68 (5), p.1827-1840</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c363t-7828bf6ee622b0cdfdf420014d66cea094791e5be4efbb4f08f7ddcad7e108383</citedby><cites>FETCH-LOGICAL-c363t-7828bf6ee622b0cdfdf420014d66cea094791e5be4efbb4f08f7ddcad7e108383</cites><orcidid>0000-0002-5469-0794 ; 0000-0003-4476-0442 ; 0000-0001-9384-0516 ; 0000-0002-3889-4893 ; 0000-0003-1025-8198</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9406356$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9406356$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Fragasse, Roman</creatorcontrib><creatorcontrib>Tantawy, Ramy</creatorcontrib><creatorcontrib>Smith, Dale</creatorcontrib><creatorcontrib>Specht, Teressa</creatorcontrib><creatorcontrib>Taghipour, Zahra</creatorcontrib><creatorcontrib>Hooser, Phillip V.</creatorcontrib><creatorcontrib>Taylor, Chris</creatorcontrib><creatorcontrib>Ronningen, Theodore J.</creatorcontrib><creatorcontrib>Fuller, Earl</creatorcontrib><creatorcontrib>Reyner, Charles</creatorcontrib><creatorcontrib>Duran, Josh</creatorcontrib><creatorcontrib>Ariyawansa, Gamini</creatorcontrib><creatorcontrib>Krishna, Sanjay</creatorcontrib><creatorcontrib>Khalil, Waleed</creatorcontrib><title>Signal and Noise Analysis of an Open-Circuit Voltage Pixel for Uncooled Infrared Image Sensors</title><title>IEEE transactions on circuits and systems. I, Regular papers</title><addtitle>TCSI</addtitle><description><![CDATA[An imaging pixel unit-cell topology leveraging a photodetector in the forward-bias region is proposed. Connecting the anode of the photodiode to the gate of a NMOS device operating in the subthreshold region provides the basis for a new open-circuit voltage pixel (VocP) architecture. Theoretical analysis is presented to show the response and performance benefits of the VocP in comparison to a conventional pixel. Based on this analysis, the signal and noise relationships for both pixels are derived and leveraged to construct an end-to-end readout system model. The model results highlight potential performance benefits of the VocP over a conventional direct-injection pixel topology. To verify the analysis, the proposed VocP readout architecture is fabricated along with a conventional direct-injection pixel readout in a <inline-formula> <tex-math notation="LaTeX">0.18~\mathrm {\mu }\text{m} </tex-math></inline-formula> CMOS technology. The VocP performance is compared to a traditional reverse-bias current-mode photodetector configuration. Simulation, modeling, and measurements align with the proposed analytical model. Benefits in system sensitivity and dynamic range are demonstrated showing more than a <inline-formula> <tex-math notation="LaTeX">2\times </tex-math></inline-formula> improvement in noise-equivalent temperature difference and a 4 dB improvement in dynamic range.]]></description><subject>Analytical models</subject><subject>Bias</subject><subject>CMOS</subject><subject>Detectors</subject><subject>Dynamic range</subject><subject>HOT</subject><subject>Infrared analysis</subject><subject>Infrared detectors</subject><subject>Infrared imagery</subject><subject>Mathematical models</subject><subject>MOS devices</subject><subject>MWIR</subject><subject>Noise</subject><subject>Open circuit voltage</subject><subject>open-circuit</subject><subject>Partial discharges</subject><subject>Photodiodes</subject><subject>Photometers</subject><subject>Pixels</subject><subject>ROIC</subject><subject>Semiconductor device modeling</subject><subject>Sensitivity</subject><subject>Topology</subject><subject>uncooled</subject><subject>Unit cell</subject><issn>1549-8328</issn><issn>1558-0806</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kNtKw0AQhoMoWKsPIN4seJ06e8zuZSkeCmKFtl4acpgtW9Js3U3Bvr0JLV7NP8M3A_MlyT2FCaVgnlaz5XzCgNEJB6WlkRfJiEqpU9CgLocsTKo509fJTYxbAGaA01HyvXSbtmhI0dbkw7uIZNq3x-gi8bafksUe23TmQnVwHfnyTVdskHy6X2yI9YGs28r7Bmsyb20owhB2A7HENvoQb5MrWzQR7851nKxfnlezt_R98TqfTd_TiivepZlmurQKUTFWQlXb2goGQEWtVIUFGJEZirJEgbYshQVts7quijpDCpprPk4eT3f3wf8cMHb51h9C_0nMmaRSS8FM1lP0RFXBxxjQ5vvgdkU45hTyQWM-aMwHjflZY7_zcNpxiPjPGwGKS8X_AJmCbp8</recordid><startdate>20210501</startdate><enddate>20210501</enddate><creator>Fragasse, Roman</creator><creator>Tantawy, Ramy</creator><creator>Smith, Dale</creator><creator>Specht, Teressa</creator><creator>Taghipour, Zahra</creator><creator>Hooser, Phillip V.</creator><creator>Taylor, Chris</creator><creator>Ronningen, Theodore J.</creator><creator>Fuller, Earl</creator><creator>Reyner, Charles</creator><creator>Duran, Josh</creator><creator>Ariyawansa, Gamini</creator><creator>Krishna, Sanjay</creator><creator>Khalil, Waleed</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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I, Regular papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Fragasse, Roman</au><au>Tantawy, Ramy</au><au>Smith, Dale</au><au>Specht, Teressa</au><au>Taghipour, Zahra</au><au>Hooser, Phillip V.</au><au>Taylor, Chris</au><au>Ronningen, Theodore J.</au><au>Fuller, Earl</au><au>Reyner, Charles</au><au>Duran, Josh</au><au>Ariyawansa, Gamini</au><au>Krishna, Sanjay</au><au>Khalil, Waleed</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Signal and Noise Analysis of an Open-Circuit Voltage Pixel for Uncooled Infrared Image Sensors</atitle><jtitle>IEEE transactions on circuits and systems. I, Regular papers</jtitle><stitle>TCSI</stitle><date>2021-05-01</date><risdate>2021</risdate><volume>68</volume><issue>5</issue><spage>1827</spage><epage>1840</epage><pages>1827-1840</pages><issn>1549-8328</issn><eissn>1558-0806</eissn><coden>ITCSCH</coden><abstract><![CDATA[An imaging pixel unit-cell topology leveraging a photodetector in the forward-bias region is proposed. Connecting the anode of the photodiode to the gate of a NMOS device operating in the subthreshold region provides the basis for a new open-circuit voltage pixel (VocP) architecture. Theoretical analysis is presented to show the response and performance benefits of the VocP in comparison to a conventional pixel. Based on this analysis, the signal and noise relationships for both pixels are derived and leveraged to construct an end-to-end readout system model. The model results highlight potential performance benefits of the VocP over a conventional direct-injection pixel topology. To verify the analysis, the proposed VocP readout architecture is fabricated along with a conventional direct-injection pixel readout in a <inline-formula> <tex-math notation="LaTeX">0.18~\mathrm {\mu }\text{m} </tex-math></inline-formula> CMOS technology. The VocP performance is compared to a traditional reverse-bias current-mode photodetector configuration. Simulation, modeling, and measurements align with the proposed analytical model. Benefits in system sensitivity and dynamic range are demonstrated showing more than a <inline-formula> <tex-math notation="LaTeX">2\times </tex-math></inline-formula> improvement in noise-equivalent temperature difference and a 4 dB improvement in dynamic range.]]></abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TCSI.2021.3068595</doi><tpages>14</tpages><orcidid>https://orcid.org/0000-0002-5469-0794</orcidid><orcidid>https://orcid.org/0000-0003-4476-0442</orcidid><orcidid>https://orcid.org/0000-0001-9384-0516</orcidid><orcidid>https://orcid.org/0000-0002-3889-4893</orcidid><orcidid>https://orcid.org/0000-0003-1025-8198</orcidid></addata></record> |
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| subjects | Analytical models Bias CMOS Detectors Dynamic range HOT Infrared analysis Infrared detectors Infrared imagery Mathematical models MOS devices MWIR Noise Open circuit voltage open-circuit Partial discharges Photodiodes Photometers Pixels ROIC Semiconductor device modeling Sensitivity Topology uncooled Unit cell |
| title | Signal and Noise Analysis of an Open-Circuit Voltage Pixel for Uncooled Infrared Image Sensors |
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