Measurement of the damage profile of ion-implanted GaAs using an optical method

Measurement of the damage profile of ion-implanted GaAs using an optical method

We describe an easy-to-use, computer controlled, optical method, based on differential reflectance, capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si implanted GaAs. The resulting damage profiles are in good agreement...

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Bibliographische Detailangaben
Hauptverfasser: Gal, M., Wengler, M.C., Ilyas, S., Rofii, I., Tan, H.H., Jagadish, C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemicals
Energy measurement
Etching
Gallium arsenide
Optical computing
Optical control
Optical modulation
Optical sensors
Particle beam optics
Reflectivity
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Beschreibung
Zusammenfassung:We describe an easy-to-use, computer controlled, optical method, based on differential reflectance, capable of determining the damage profiles in ion-implanted semiconductors. Using this method we measured the damage profiles in Si implanted GaAs. The resulting damage profiles are in good agreement with the total vacancy profiles generated by the transport of ions in matter (TRIM95).
DOI:10.1109/SIM.2000.939216