Corrections to "A Modified CLTdSCR With Low Leakage and Low Capacitance for ESD Protection" [Feb 21 934-937]

In the above article [1] , Fig. 2 contains incorrect labeling. The correct Fig. 2 is presented here. Referring to this new figure, in the third paragraph of Section III, "C6" and "C10" in the original text should be revised to "C5-1" and "C5-2," respectively:...

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Veröffentlicht in:IEEE transactions on electron devices 2021-04, Vol.68 (4), p.2147-2147
Hauptverfasser: Sun, Kangming, Li, Ting, Meng, Liya
Format: Artikel
Sprache:eng
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Zusammenfassung:In the above article [1] , Fig. 2 contains incorrect labeling. The correct Fig. 2 is presented here. Referring to this new figure, in the third paragraph of Section III, "C6" and "C10" in the original text should be revised to "C5-1" and "C5-2," respectively: "In m -CLTdSCR, C1 and C2, and C5-1 and C5-2 are respectively connected in series and then connected in parallel. The total capacitance can be approximated by the formula of \text{C}_{\mathrm {ESD}}\approx \mathrm {C1/C2} +C5-1/C5-2, while the total capacitance of of CLTdSCR is about C1/C2 + C6/C8 + C10/C12 + C13/C15 + C9/C14 + C7 + C11."
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2021.3060259