The effect of emitter implant and anneal on high-voltage 4H-SiC BJTs

We previously reported the first implanted-emitter bipolar transistor in 4H-SiC. The device showed a record-high common emitter current gain of 40, and forward drop of 1 V at forward current density of 50A/cm/sup 2/. The open-base breakdown voltage was less than 60 V due to the very small base width...

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Hauptverfasser:	Yi Tang, Fedison, J.B., Chow, T.P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Bipolar transistors Contracts Doping Electric breakdown Implants Manufacturing Silicon carbide Temperature Voltage
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creator	Yi Tang Fedison, J.B. Chow, T.P.
description	We previously reported the first implanted-emitter bipolar transistor in 4H-SiC. The device showed a record-high common emitter current gain of 40, and forward drop of 1 V at forward current density of 50A/cm/sup 2/. The open-base breakdown voltage was less than 60 V due to the very small base width (
doi_str_mv	10.1109/DRC.2001.937935
format	Conference Proceeding
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The device showed a record-high common emitter current gain of 40, and forward drop of 1 V at forward current density of 50A/cm/sup 2/. The open-base breakdown voltage was less than 60 V due to the very small base width (<0.2 μm). In this work, improved epi-base, implanted-emitter, npn bipolar junction transistor is reported with increased base width and improved emitter anneal. The devices showed a blocking voltage of 500 V and maximum common emitter current gain of 8. Negative temperature coefficient is observed.</description><identifier>ISBN: 9780780370142</identifier><identifier>ISBN: 0780370147</identifier><identifier>DOI: 10.1109/DRC.2001.937935</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Bipolar transistors ; Contracts ; Doping ; Electric breakdown ; Implants ; Manufacturing ; Silicon carbide ; Temperature ; Voltage</subject><ispartof>Device Research Conference. Conference Digest (Cat. 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The device showed a record-high common emitter current gain of 40, and forward drop of 1 V at forward current density of 50A/cm/sup 2/. The open-base breakdown voltage was less than 60 V due to the very small base width (<0.2 μm). In this work, improved epi-base, implanted-emitter, npn bipolar junction transistor is reported with increased base width and improved emitter anneal. The devices showed a blocking voltage of 500 V and maximum common emitter current gain of 8. Negative temperature coefficient is observed.</description><subject>Annealing</subject><subject>Bipolar transistors</subject><subject>Contracts</subject><subject>Doping</subject><subject>Electric breakdown</subject><subject>Implants</subject><subject>Manufacturing</subject><subject>Silicon carbide</subject><subject>Temperature</subject><subject>Voltage</subject><isbn>9780780370142</isbn><isbn>0780370147</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jj0LwjAURQMiKNpZcHp_oDVp0tastoo4avcS9KWNpB80QfDfW9DZyz3c4SyXkA2jEWNU7oprHsWUskjyTPJkRgKZ7elUnlEm4gUJnHvSKSIRIk2XpCgbBNQa7x56Ddga73EE0w5WdR5U95joUFnoO2hM3YSv3npVI4hzeDM5HC6lW5O5VtZh8NsV2Z6OZX4ODSJWw2haNb6r7yX-V34AwDs4Yg</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Yi Tang</creator><creator>Fedison, J.B.</creator><creator>Chow, T.P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2001</creationdate><title>The effect of emitter implant and anneal on high-voltage 4H-SiC BJTs</title><author>Yi Tang ; Fedison, J.B. ; Chow, T.P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_9379353</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Annealing</topic><topic>Bipolar transistors</topic><topic>Contracts</topic><topic>Doping</topic><topic>Electric breakdown</topic><topic>Implants</topic><topic>Manufacturing</topic><topic>Silicon carbide</topic><topic>Temperature</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Yi Tang</creatorcontrib><creatorcontrib>Fedison, J.B.</creatorcontrib><creatorcontrib>Chow, T.P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yi Tang</au><au>Fedison, J.B.</au><au>Chow, T.P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The effect of emitter implant and anneal on high-voltage 4H-SiC BJTs</atitle><btitle>Device Research Conference. Conference Digest (Cat. No.01TH8561)</btitle><stitle>DRC</stitle><date>2001</date><risdate>2001</risdate><spage>209</spage><epage>210</epage><pages>209-210</pages><isbn>9780780370142</isbn><isbn>0780370147</isbn><abstract>We previously reported the first implanted-emitter bipolar transistor in 4H-SiC. The device showed a record-high common emitter current gain of 40, and forward drop of 1 V at forward current density of 50A/cm/sup 2/. The open-base breakdown voltage was less than 60 V due to the very small base width (<0.2 μm). In this work, improved epi-base, implanted-emitter, npn bipolar junction transistor is reported with increased base width and improved emitter anneal. The devices showed a blocking voltage of 500 V and maximum common emitter current gain of 8. Negative temperature coefficient is observed.</abstract><pub>IEEE</pub><doi>10.1109/DRC.2001.937935</doi></addata></record>
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identifier	ISBN: 9780780370142
ispartof	Device Research Conference. Conference Digest (Cat. No.01TH8561), 2001, p.209-210
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Annealing Bipolar transistors Contracts Doping Electric breakdown Implants Manufacturing Silicon carbide Temperature Voltage
title	The effect of emitter implant and anneal on high-voltage 4H-SiC BJTs
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