The effect of emitter implant and anneal on high-voltage 4H-SiC BJTs

The effect of emitter implant and anneal on high-voltage 4H-SiC BJTs

We previously reported the first implanted-emitter bipolar transistor in 4H-SiC. The device showed a record-high common emitter current gain of 40, and forward drop of 1 V at forward current density of 50A/cm/sup 2/. The open-base breakdown voltage was less than 60 V due to the very small base width...

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Bibliographische Detailangaben
Hauptverfasser: Yi Tang, Fedison, J.B., Chow, T.P.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Bipolar transistors
Contracts
Doping
Electric breakdown
Implants
Manufacturing
Silicon carbide
Temperature
Voltage
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Zusammenfassung:We previously reported the first implanted-emitter bipolar transistor in 4H-SiC. The device showed a record-high common emitter current gain of 40, and forward drop of 1 V at forward current density of 50A/cm/sup 2/. The open-base breakdown voltage was less than 60 V due to the very small base width (
DOI:10.1109/DRC.2001.937935