The design of CMOS transimpedance amplifier based on BSIM large-signal model

A modified BSIM CMOS RF large-signal model is presented for RF circuit design. The high-frequency CMOS model is based on BSIM3v3, by adding some passive components to describe the microwave behavior. Integrated CMOS transimpedance (TZ) amplifier circuits were designed and fabricated based on this mo...

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Bibliographische Detailangaben

Hauptverfasser:	Chin-Wei Kuo, Chao-Chih Hsiao, Shih-Cheng Yang, Yi-Jen Chan
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	CMOS technology Integrated circuit technology MOSFETs Optical amplifiers Optical fiber communication Optical receivers Radio frequency Radiofrequency amplifiers Semiconductor device modeling Substrates
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