The design of CMOS transimpedance amplifier based on BSIM large-signal model

The design of CMOS transimpedance amplifier based on BSIM large-signal model

A modified BSIM CMOS RF large-signal model is presented for RF circuit design. The high-frequency CMOS model is based on BSIM3v3, by adding some passive components to describe the microwave behavior. Integrated CMOS transimpedance (TZ) amplifier circuits were designed and fabricated based on this mo...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chin-Wei Kuo, Chao-Chih Hsiao, Shih-Cheng Yang, Yi-Jen Chan
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS technology
Integrated circuit technology
MOSFETs
Optical amplifiers
Optical fiber communication
Optical receivers
Radio frequency
Radiofrequency amplifiers
Semiconductor device modeling
Substrates
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A modified BSIM CMOS RF large-signal model is presented for RF circuit design. The high-frequency CMOS model is based on BSIM3v3, by adding some passive components to describe the microwave behavior. Integrated CMOS transimpedance (TZ) amplifier circuits were designed and fabricated based on this model. A 0.35 /spl mu/m CMOS technology was used for circuit realization, and a capacitive-peaking [1-3] design to improve the bandwidth of TZ amplifier was also proposed and investigated.
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2001.935667