The design of CMOS transimpedance amplifier based on BSIM large-signal model

A modified BSIM CMOS RF large-signal model is presented for RF circuit design. The high-frequency CMOS model is based on BSIM3v3, by adding some passive components to describe the microwave behavior. Integrated CMOS transimpedance (TZ) amplifier circuits were designed and fabricated based on this mo...

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Hauptverfasser: Chin-Wei Kuo, Chao-Chih Hsiao, Shih-Cheng Yang, Yi-Jen Chan
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Chao-Chih Hsiao
Shih-Cheng Yang
Yi-Jen Chan
description A modified BSIM CMOS RF large-signal model is presented for RF circuit design. The high-frequency CMOS model is based on BSIM3v3, by adding some passive components to describe the microwave behavior. Integrated CMOS transimpedance (TZ) amplifier circuits were designed and fabricated based on this model. A 0.35 /spl mu/m CMOS technology was used for circuit realization, and a capacitive-peaking [1-3] design to improve the bandwidth of TZ amplifier was also proposed and investigated.
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subjects CMOS technology
Integrated circuit technology
MOSFETs
Optical amplifiers
Optical fiber communication
Optical receivers
Radio frequency
Radiofrequency amplifiers
Semiconductor device modeling
Substrates
title The design of CMOS transimpedance amplifier based on BSIM large-signal model
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