The design of CMOS transimpedance amplifier based on BSIM large-signal model
A modified BSIM CMOS RF large-signal model is presented for RF circuit design. The high-frequency CMOS model is based on BSIM3v3, by adding some passive components to describe the microwave behavior. Integrated CMOS transimpedance (TZ) amplifier circuits were designed and fabricated based on this mo...
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creator | Chin-Wei Kuo Chao-Chih Hsiao Shih-Cheng Yang Yi-Jen Chan |
description | A modified BSIM CMOS RF large-signal model is presented for RF circuit design. The high-frequency CMOS model is based on BSIM3v3, by adding some passive components to describe the microwave behavior. Integrated CMOS transimpedance (TZ) amplifier circuits were designed and fabricated based on this model. A 0.35 /spl mu/m CMOS technology was used for circuit realization, and a capacitive-peaking [1-3] design to improve the bandwidth of TZ amplifier was also proposed and investigated. |
doi_str_mv | 10.1109/RFIC.2001.935667 |
format | Conference Proceeding |
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The high-frequency CMOS model is based on BSIM3v3, by adding some passive components to describe the microwave behavior. Integrated CMOS transimpedance (TZ) amplifier circuits were designed and fabricated based on this model. 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No.01CH37173)</title><addtitle>RFIC</addtitle><description>A modified BSIM CMOS RF large-signal model is presented for RF circuit design. The high-frequency CMOS model is based on BSIM3v3, by adding some passive components to describe the microwave behavior. Integrated CMOS transimpedance (TZ) amplifier circuits were designed and fabricated based on this model. A 0.35 /spl mu/m CMOS technology was used for circuit realization, and a capacitive-peaking [1-3] design to improve the bandwidth of TZ amplifier was also proposed and investigated.</description><subject>CMOS technology</subject><subject>Integrated circuit technology</subject><subject>MOSFETs</subject><subject>Optical amplifiers</subject><subject>Optical fiber communication</subject><subject>Optical receivers</subject><subject>Radio frequency</subject><subject>Radiofrequency amplifiers</subject><subject>Semiconductor device modeling</subject><subject>Substrates</subject><issn>1529-2517</issn><issn>2375-0995</issn><isbn>0780366018</isbn><isbn>9780780366015</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotkMtOwzAURC0eEmlhj1j5BxKu49iOlxBRiJSqEi3ryo6vi1Feirvh72lVVqNZnNHREPLIIGMM9PPnqq6yHIBlmgsp1RVJcq5EClqLa7IAVQKXElh5QxImcp3mgqk7sojxBwAUkzohze4bqcMYDgMdPa3Wmy09zmaIoZ_QmaFFavqpCz7gTK2J6Og40NdtvaadmQ-YnknT0X502N2TW2-6iA__uSRfq7dd9ZE2m_e6emnSwKA4pqU2pXVomTtZIIMWXVsYzL0s2lwopk8VXGGLErzQaLV23nPnLUivkLd8SZ4uuwER99McejP_7i8n8D9mtU7d</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Chin-Wei Kuo</creator><creator>Chao-Chih Hsiao</creator><creator>Shih-Cheng Yang</creator><creator>Yi-Jen Chan</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2001</creationdate><title>The design of CMOS transimpedance amplifier based on BSIM large-signal model</title><author>Chin-Wei Kuo ; Chao-Chih Hsiao ; Shih-Cheng Yang ; Yi-Jen Chan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i104t-89a8bdeb1d007e10cedc4ae2f64c25719dc40d4b480f59eb99dff3dfb06f7e3c3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>CMOS technology</topic><topic>Integrated circuit technology</topic><topic>MOSFETs</topic><topic>Optical amplifiers</topic><topic>Optical fiber communication</topic><topic>Optical receivers</topic><topic>Radio frequency</topic><topic>Radiofrequency amplifiers</topic><topic>Semiconductor device modeling</topic><topic>Substrates</topic><toplevel>online_resources</toplevel><creatorcontrib>Chin-Wei Kuo</creatorcontrib><creatorcontrib>Chao-Chih Hsiao</creatorcontrib><creatorcontrib>Shih-Cheng Yang</creatorcontrib><creatorcontrib>Yi-Jen Chan</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Chin-Wei Kuo</au><au>Chao-Chih Hsiao</au><au>Shih-Cheng Yang</au><au>Yi-Jen Chan</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The design of CMOS transimpedance amplifier based on BSIM large-signal model</atitle><btitle>2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173)</btitle><stitle>RFIC</stitle><date>2001</date><risdate>2001</risdate><spage>165</spage><epage>168</epage><pages>165-168</pages><issn>1529-2517</issn><eissn>2375-0995</eissn><isbn>0780366018</isbn><isbn>9780780366015</isbn><abstract>A modified BSIM CMOS RF large-signal model is presented for RF circuit design. The high-frequency CMOS model is based on BSIM3v3, by adding some passive components to describe the microwave behavior. Integrated CMOS transimpedance (TZ) amplifier circuits were designed and fabricated based on this model. A 0.35 /spl mu/m CMOS technology was used for circuit realization, and a capacitive-peaking [1-3] design to improve the bandwidth of TZ amplifier was also proposed and investigated.</abstract><pub>IEEE</pub><doi>10.1109/RFIC.2001.935667</doi><tpages>4</tpages></addata></record> |
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ispartof | 2001 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium (IEEE Cat. No.01CH37173), 2001, p.165-168 |
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language | eng |
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source | IEEE Electronic Library (IEL) Conference Proceedings |
subjects | CMOS technology Integrated circuit technology MOSFETs Optical amplifiers Optical fiber communication Optical receivers Radio frequency Radiofrequency amplifiers Semiconductor device modeling Substrates |
title | The design of CMOS transimpedance amplifier based on BSIM large-signal model |
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