Excellent Pattern Recognition Accuracy of Neural Networks Using Hybrid Synapses and Complementary Training
To overcome the performance degradation in hardware neural networks (NNs) with non-ideal synapse devices, we proposed a novel neuromorphic architecture with both TiO x -based interfacial RRAM and CBRAM-based filamentary RRAM for highly accurate NN training and long-term inference reliability. We use...
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Veröffentlicht in: | IEEE electron device letters 2021-04, Vol.42 (4), p.609-612 |
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Sprache: | eng |
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Zusammenfassung: | To overcome the performance degradation in hardware neural networks (NNs) with non-ideal synapse devices, we proposed a novel neuromorphic architecture with both TiO x -based interfacial RRAM and CBRAM-based filamentary RRAM for highly accurate NN training and long-term inference reliability. We used a threshold-triggered training scheme, in which interfacial and filamentary RRAMs were programmed in a complementary fashion. This took advantage of the long retention time of the filamentary RRAM and the high-resolution, symmetric weight update in the interfacial RRAM. Additional evaluation of device parameters, such as linearity, precision, variation, and retention time, was conducted. An excellent pattern recognition accuracy of ~97% was achieved during training with the MNIST dataset. Thus, reliable inference accuracy after training was maintained using the filamentary RRAM. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2021.3058221 |