Excellent Pattern Recognition Accuracy of Neural Networks Using Hybrid Synapses and Complementary Training

To overcome the performance degradation in hardware neural networks (NNs) with non-ideal synapse devices, we proposed a novel neuromorphic architecture with both TiO x -based interfacial RRAM and CBRAM-based filamentary RRAM for highly accurate NN training and long-term inference reliability. We use...

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Veröffentlicht in:IEEE electron device letters 2021-04, Vol.42 (4), p.609-612
Hauptverfasser: Kwak, Myonghoon, Choi, Wooseok, Heo, Seongjae, Lee, Chuljun, Nikam, Revannath, Kim, Seyoung, Hwang, Hyunsang
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Sprache:eng
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Zusammenfassung:To overcome the performance degradation in hardware neural networks (NNs) with non-ideal synapse devices, we proposed a novel neuromorphic architecture with both TiO x -based interfacial RRAM and CBRAM-based filamentary RRAM for highly accurate NN training and long-term inference reliability. We used a threshold-triggered training scheme, in which interfacial and filamentary RRAMs were programmed in a complementary fashion. This took advantage of the long retention time of the filamentary RRAM and the high-resolution, symmetric weight update in the interfacial RRAM. Additional evaluation of device parameters, such as linearity, precision, variation, and retention time, was conducted. An excellent pattern recognition accuracy of ~97% was achieved during training with the MNIST dataset. Thus, reliable inference accuracy after training was maintained using the filamentary RRAM.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2021.3058221