Dependence of turn-on and turn-off characteristics on anode/gate geometry of high-voltage 4H-SiC GTO thyristors

Dependence of turn-on and turn-off characteristics on anode/gate geometry of high-voltage 4H-SiC GTO thyristors

In this paper, we report static and switching characteristics of 1 kV and 3 kV 4H-SiC GTO thyristors with various anode-gate geometries. Measured switching results on two different anode geometries indicate the involute layout produces the fastest turn-on response while the concentric layout produce...

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Hauptverfasser: Fedison, J.B., Chow, T.P., Ghezzo, M., Kretchmer, J.W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Anodes
Area measurement
Charge carrier lifetime
Geometry
Implants
Silicon carbide
Temperature dependence
Thermal conductivity
Thyristors
Voltage
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Beschreibung
Zusammenfassung:In this paper, we report static and switching characteristics of 1 kV and 3 kV 4H-SiC GTO thyristors with various anode-gate geometries. Measured switching results on two different anode geometries indicate the involute layout produces the fastest turn-on response while the concentric layout produces the fastest turn-off, as similar to silicon thyristors. Strong temperature dependence of both the static and switching characteristics of these GTOs has been observed and is attributed to acceptor ionization in the p/sup +/ anode and the increase of carrier lifetime with temperature.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2001.934583