6.5 kV-modules using IGBTs with field stop technology

A new 6.5 kV field stop IGBT/diode chipset is presented with a large safe operating area for 600 A module applications. The IGBT cell design and the vertical field stop structure is optimized with respect to a low on state voltage and low short circuit current. The turn on, turn off and short circui...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Bauer, J.G., Auerbach, F., Porst, A., Roth, R., Ruething, H., Schilling, O.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Design optimization Diodes Insulated gate bipolar transistors Inverters Ion implantation Low voltage Power transmission Short circuit currents Temperature Voltage fluctuations
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