6.5 kV-modules using IGBTs with field stop technology

6.5 kV-modules using IGBTs with field stop technology

A new 6.5 kV field stop IGBT/diode chipset is presented with a large safe operating area for 600 A module applications. The IGBT cell design and the vertical field stop structure is optimized with respect to a low on state voltage and low short circuit current. The turn on, turn off and short circui...

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Bibliographische Detailangaben
Hauptverfasser: Bauer, J.G., Auerbach, F., Porst, A., Roth, R., Ruething, H., Schilling, O.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Design optimization
Diodes
Insulated gate bipolar transistors
Inverters
Ion implantation
Low voltage
Power transmission
Short circuit currents
Temperature
Voltage fluctuations
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Beschreibung
Zusammenfassung:A new 6.5 kV field stop IGBT/diode chipset is presented with a large safe operating area for 600 A module applications. The IGBT cell design and the vertical field stop structure is optimized with respect to a low on state voltage and low short circuit current. The turn on, turn off and short circuit ruggedness are experimentally demonstrated at 4.4 kV line voltage and 125/spl deg/C temperature. The turn off behavior is verified at the twofold nominal current.
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2001.934571