6.5 kV-modules using IGBTs with field stop technology
A new 6.5 kV field stop IGBT/diode chipset is presented with a large safe operating area for 600 A module applications. The IGBT cell design and the vertical field stop structure is optimized with respect to a low on state voltage and low short circuit current. The turn on, turn off and short circui...
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| creator | Bauer, J.G. Auerbach, F. Porst, A. Roth, R. Ruething, H. Schilling, O. |
| description | A new 6.5 kV field stop IGBT/diode chipset is presented with a large safe operating area for 600 A module applications. The IGBT cell design and the vertical field stop structure is optimized with respect to a low on state voltage and low short circuit current. The turn on, turn off and short circuit ruggedness are experimentally demonstrated at 4.4 kV line voltage and 125/spl deg/C temperature. The turn off behavior is verified at the twofold nominal current. |
| doi_str_mv | 10.1109/ISPSD.2001.934571 |
| format | Conference Proceeding |
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The IGBT cell design and the vertical field stop structure is optimized with respect to a low on state voltage and low short circuit current. The turn on, turn off and short circuit ruggedness are experimentally demonstrated at 4.4 kV line voltage and 125/spl deg/C temperature. The turn off behavior is verified at the twofold nominal current.</description><identifier>ISSN: 1063-6854</identifier><identifier>ISBN: 9784886860569</identifier><identifier>ISBN: 4886860567</identifier><identifier>EISSN: 1946-0201</identifier><identifier>DOI: 10.1109/ISPSD.2001.934571</identifier><language>eng</language><publisher>IEEE</publisher><subject>Design optimization ; Diodes ; Insulated gate bipolar transistors ; Inverters ; Ion implantation ; Low voltage ; Power transmission ; Short circuit currents ; Temperature ; Voltage fluctuations</subject><ispartof>Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. 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The turn off behavior is verified at the twofold nominal current.</description><subject>Design optimization</subject><subject>Diodes</subject><subject>Insulated gate bipolar transistors</subject><subject>Inverters</subject><subject>Ion implantation</subject><subject>Low voltage</subject><subject>Power transmission</subject><subject>Short circuit currents</subject><subject>Temperature</subject><subject>Voltage fluctuations</subject><issn>1063-6854</issn><issn>1946-0201</issn><isbn>9784886860569</isbn><isbn>4886860567</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj1FPwjAUhRvRRIL7AfrUP9DZrr13t4-KiEtINAF9JVvXwnQwQkcM_94leF6-h_PlJIexeyVTpaR9LJYfy5c0k1KlVhvI1RUbK2tQyEyqEUtsToYICSWgvR46iVoggbllSYzfcoiBwYAxA0yB_3yJXVefWh_5KTb7DS_mz6vIf5t-y0Pj25rHvjvw3rvtvmu7zfmO3YSyjT7554R9vs5W0zexeJ8X06eFcAqyXhA4dFRpLAkwhAAANVCGYBCthLrKjFPlgBKtDaQMDaqqQq4dUm2snrCHy27jvV8fjs2uPJ7Xl8_6D9D9Rkw</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>Bauer, J.G.</creator><creator>Auerbach, F.</creator><creator>Porst, A.</creator><creator>Roth, R.</creator><creator>Ruething, H.</creator><creator>Schilling, O.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>2001</creationdate><title>6.5 kV-modules using IGBTs with field stop technology</title><author>Bauer, J.G. ; Auerbach, F. ; Porst, A. ; Roth, R. ; Ruething, H. ; Schilling, O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c152t-85c6c8b36a856fff555d58265466905db24c1adb2a699f814836a1bf73c68d493</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Design optimization</topic><topic>Diodes</topic><topic>Insulated gate bipolar transistors</topic><topic>Inverters</topic><topic>Ion implantation</topic><topic>Low voltage</topic><topic>Power transmission</topic><topic>Short circuit currents</topic><topic>Temperature</topic><topic>Voltage fluctuations</topic><toplevel>online_resources</toplevel><creatorcontrib>Bauer, J.G.</creatorcontrib><creatorcontrib>Auerbach, F.</creatorcontrib><creatorcontrib>Porst, A.</creatorcontrib><creatorcontrib>Roth, R.</creatorcontrib><creatorcontrib>Ruething, H.</creatorcontrib><creatorcontrib>Schilling, O.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Bauer, J.G.</au><au>Auerbach, F.</au><au>Porst, A.</au><au>Roth, R.</au><au>Ruething, H.</au><au>Schilling, O.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>6.5 kV-modules using IGBTs with field stop technology</atitle><btitle>Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216)</btitle><stitle>ISPSD</stitle><date>2001</date><risdate>2001</risdate><spage>121</spage><epage>124</epage><pages>121-124</pages><issn>1063-6854</issn><eissn>1946-0201</eissn><isbn>9784886860569</isbn><isbn>4886860567</isbn><abstract>A new 6.5 kV field stop IGBT/diode chipset is presented with a large safe operating area for 600 A module applications. The IGBT cell design and the vertical field stop structure is optimized with respect to a low on state voltage and low short circuit current. The turn on, turn off and short circuit ruggedness are experimentally demonstrated at 4.4 kV line voltage and 125/spl deg/C temperature. The turn off behavior is verified at the twofold nominal current.</abstract><pub>IEEE</pub><doi>10.1109/ISPSD.2001.934571</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1063-6854 |
| ispartof | Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2001, p.121-124 |
| issn | 1063-6854 1946-0201 |
| language | eng |
| recordid | cdi_ieee_primary_934571 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Design optimization Diodes Insulated gate bipolar transistors Inverters Ion implantation Low voltage Power transmission Short circuit currents Temperature Voltage fluctuations |
| title | 6.5 kV-modules using IGBTs with field stop technology |
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