A highly-tunable 12 GHz quadrature LC-VCO in SiGe BiCMOS process

A highly-tunable 12 GHz quadrature LC-VCO in SiGe BiCMOS process

This paper describes a 12 GHz fully-integrated, fully-differential quadrature LC VCO. Fabricated in a 0.35 /spl mu/m SiGe BiCMOS process with 55 GHz f/sub T/, the oscillator achieves 37% tuning range (9.62 to 14.0 GHz) and exhibits 113.5 and -112.3 dBc/Hz phase noise at 10 MHz away from 11 and 13 GH...

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Bibliographische Detailangaben
Hauptverfasser: Coban, A.L., Ahmed, K., Chang, C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS integrated circuits
Circuit optimization
Coupling circuits
Germanium silicon alloys
Inductors
Phase noise
Silicon germanium
Tail
Tuning
Voltage-controlled oscillators
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Zusammenfassung:This paper describes a 12 GHz fully-integrated, fully-differential quadrature LC VCO. Fabricated in a 0.35 /spl mu/m SiGe BiCMOS process with 55 GHz f/sub T/, the oscillator achieves 37% tuning range (9.62 to 14.0 GHz) and exhibits 113.5 and -112.3 dBc/Hz phase noise at 10 MHz away from 11 and 13 GHz oscillation frequencies, respectively. The oscillator draws 39 mA current from a 3.3 V supply and occupies 0.36 mm/sup 2/ active die area.
DOI:10.1109/VLSIC.2001.934212