A 5 Gb/s monolithically integrated lightwave transmitter with 1.5 mu m multiple quantum well laser and HBT driver circuit

A multiple quantum well ridge waveguide laser at 1.5- mu m wavelength and a driver circuit comprised of four heterojunction bipolar transistors (HBTs) have been monolithically integrated on a semiinsulating InP substrate. This optoelectronic integrated circuit (OEIC) has been realized by metalorgani...

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Veröffentlicht in:	IEEE photonics technology letters 1991-10, Vol.3 (10), p.928-930
Hauptverfasser:	Liou, K.-Y., Chandrasekhar, S., Dentai, A.G., Burrows, E.C., Qua, G.J., Joyner, C.H., Burrus, C.A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Driver circuits Epitaxial growth Heterojunction bipolar transistors Indium phosphide Laser beam cutting Optoelectronic devices Quantum well lasers Substrates Transmitters Waveguide lasers
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