A 5 Gb/s monolithically integrated lightwave transmitter with 1.5 mu m multiple quantum well laser and HBT driver circuit

A 5 Gb/s monolithically integrated lightwave transmitter with 1.5 mu m multiple quantum well laser and HBT driver circuit

A multiple quantum well ridge waveguide laser at 1.5- mu m wavelength and a driver circuit comprised of four heterojunction bipolar transistors (HBTs) have been monolithically integrated on a semiinsulating InP substrate. This optoelectronic integrated circuit (OEIC) has been realized by metalorgani...

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Veröffentlicht in:IEEE photonics technology letters 1991-10, Vol.3 (10), p.928-930
Hauptverfasser: Liou, K.-Y., Chandrasekhar, S., Dentai, A.G., Burrows, E.C., Qua, G.J., Joyner, C.H., Burrus, C.A.
Format: Artikel
Sprache:eng
Schlagworte:
Driver circuits
Epitaxial growth
Heterojunction bipolar transistors
Indium phosphide
Laser beam cutting
Optoelectronic devices
Quantum well lasers
Substrates
Transmitters
Waveguide lasers
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Beschreibung
Zusammenfassung:A multiple quantum well ridge waveguide laser at 1.5- mu m wavelength and a driver circuit comprised of four heterojunction bipolar transistors (HBTs) have been monolithically integrated on a semiinsulating InP substrate. This optoelectronic integrated circuit (OEIC) has been realized by metalorganic vapor phase epitaxy. The laser threshold current is near 20 mA. The HBT DC current gain is 40 and the unity gain cutoff frequency is 30 GHz. Pseudorandom pulsed operation of the OEIC transmitter has been demonstrated for bit rates up to 5 Gb/s.< >
ISSN:1041-1135
1941-0174
DOI:10.1109/68.93266