Wet or plasma clean? Competing or complementary? A dual damascene study with Si-OC-H dielectric on copper wiring

Wet or plasma clean? Competing or complementary? A dual damascene study with Si-OC-H dielectric on copper wiring

The integration of dual damascene-copper/low-k structures requires the development of new cleaning processes and chemistries compatible with the new materials. This study examines the opportunities for plasma cleaning and wet cleaning.

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Bibliographische Detailangaben
Hauptverfasser: Louis, D., Assous, M., Blanc, R., Brun, P., Arvet, C., Lajoinie, E., Holmes, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Adhesives
Cleaning
Copper
Dielectric materials
Etching
Plasma applications
Plasma chemistry
Polymers
Resists
Silicon
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Beschreibung
Zusammenfassung:The integration of dual damascene-copper/low-k structures requires the development of new cleaning processes and chemistries compatible with the new materials. This study examines the opportunities for plasma cleaning and wet cleaning.
DOI:10.1109/IITC.2001.930086