Line width dependence of copper resistivity

Line width dependence of copper resistivity

Studies were carried out to characterize the copper line resistivity as a function of linewidth for sub-130 nm feature size. The Cu line resistivity was found to increase rapidly as the feature size becomes smaller than 0.2 /spl mu/m. Electron scattering from both sidewalls and grain boundaries play...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Qing-Tang Jiang, Ming-Hsing Tsai, Havemann, R.H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Atherosclerosis
Conductivity
Copper
Electrons
Etching
Grain boundaries
Morphology
Scattering
Temperature
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Beschreibung
Zusammenfassung:Studies were carried out to characterize the copper line resistivity as a function of linewidth for sub-130 nm feature size. The Cu line resistivity was found to increase rapidly as the feature size becomes smaller than 0.2 /spl mu/m. Electron scattering from both sidewalls and grain boundaries played significant roles even at geometries several times of the electron mean free path in Cu.
DOI:10.1109/IITC.2001.930068