A Small-Signal GFET Equivalent Circuit Considering an Explicit Contribution of Contact Resistances

A small-signal equivalent circuit for graphene field-effect transistors (GFETs) is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact resistances from intrinsic parameters, obtained by a de...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2021-01, Vol.31 (1), p.29-32
Hauptverfasser:	Pacheco-Sanchez, Anibal, Ramos-Silva, Javier N., Ramirez-Garcia, Eloy, Jimenez, David
Format:	Artikel
Sprache:	eng
Schlagworte:	Contact resistance Cutoff frequency Equivalent circuits Field effect transistors Graphene graphene field-effect transistor (GFET) Graphical user interface high-frequency (HF) Logic gates Matrices Process parameters Scattering parameters Semiconductor devices small-signal circuit Transistors
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