A Small-Signal GFET Equivalent Circuit Considering an Explicit Contribution of Contact Resistances

A small-signal equivalent circuit for graphene field-effect transistors (GFETs) is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact resistances from intrinsic parameters, obtained by a deembedding process, and extrinsic parameters of the circuit is considered. The experimental high-frequency performance of three devices from two different GFET technologies is properly described by the proposed small-signal circuit. Some model parameters scale with the device footprint. The correct detachment of contact resistances from the internal transistor enables to assess their impact on the intrinsic cutoff frequency of the studied devices.