Ferroelectric and SiGe device development for high data rate communications

Future broadband wireless communication systems will require hardware that is capable of processing and tuning high RF power microwave signals K-band frequencies. Integration of ferroelectric and SiGe technologies is proposed for developing low-cost hardware that is capable of providing this functionality. Ferroelectric thin film phase shifters demonstrated 140/spl deg/ of analog tuning at 20 GHz, and computer simulations show the feasibility of K-band SiGe amplifiers. However, minor deviations from ideal film quality make these performance goals difficult to attain, and integration of the two technologies requires that the quality of both materials be maintained.