Extended Electrical and Photonic Characterization of GaN-Based Ultra-Violet MicroLEDs With an ITO Emission Window Layer

We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emiss...

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Veröffentlicht in:	IEEE photonics journal 2020-12, Vol.12 (6), p.1-9
Hauptverfasser:	Tsai, Yi-Lin, Huang, Sheng-Kai, Huang, Huang-Hsiung, Yang, Shu-Mei, Liang, Kai-Ling, Kuo, Wei-Hung, Fang, Yen-Hsiang, Wu, Chih-I, Wang, Shou-Wei, Shih, Hsiang-Yun, Xu, Zhiyu, Cho, Minkyu, Shen, Shyh-Chiang, Lin, Chien-Chung
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrhenius plot Current injection Current-voltage characteristics Electrical properties Emission Gallium nitride Gallium nitrides GaN Leakage current Leakage currents Light emitting diodes low temperature current-voltage characterization micro LEDs Quantum efficiency Temperature dependence Ultra-violet emission
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Zusammenfassung:	We determined the optical and electrical characteristics of GaN-based, ultraviolet micro light emitting diodes (microLEDs). Such microLEDs are essential to next-generation high-resolution micro-displays. Square-shaped microLEDs of different sizes (side lengths: 5-50 μm) were designed. The peak emission wavelength of these devices shifted
ISSN:	1943-0655 1943-0655 1943-0647
DOI:	10.1109/JPHOT.2020.3037220