Formation of the electrically active centres in silicon irradiated with high energy ions and annealed at temperatures of 350-1050/spl deg/C

Three groups of electrically active centers were observed in silicon implanted with high energy ions and annealed in a wide temperature range. The first centers are thermal donors enhance formed in the temperature range of 380-500/spl deg/C. The second ones are shallow acceptors observed in the temperature range of 500-570/spl deg/C. The last ones are most likely "new" thermal donors introduced in high concentration after annealing at 600-1050/spl deg/C. Depth distributions of the centers and-the reasons of their effective formation are discussed.