The effects of plasma-induced damage on transistor degradation and the relationship to field programmable gate array performance

The impact of plasma-induced damage on the speed performance of a field programmable gate array (FPGA) is presented. It was found that FPGA speed degradation induced by product reliability burn-in was directly related to a large negative threshold voltage (V/sub t/) shift of the surface channel PMOS...

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Bibliographische Detailangaben

Hauptverfasser:	Pagaduan, F.E., Lee, J.K.J., Vedagarbha, V., Lui, K., Hart, M.J., Gitlin, D., Takaso, T., Kamiyama, S., Nakayama, K.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Degradation Field programmable gate arrays MOSFET circuits Negative bias temperature instability Niobium compounds Plasma materials processing Plasma temperature Stress Threshold voltage Titanium compounds
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