A 0.0082-mm², 192-nW Single BJT Branch Bandgap Reference in 0.18-μm CMOS

A 0.0082-mm², 192-nW Single BJT Branch Bandgap Reference in 0.18-μm CMOS

In this letter, we propose a bandgap reference (BGR) with a single BJT branch and a PTAT-embedded amplifier with a cascode Miller frequency compensation. As implemented in 0.18- \mu \text{m} CMOS, the proposed BGR occupies a small area of 0.0082 mm 2 and low power consumption of 192 nW while achiev...

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Veröffentlicht in:IEEE solid-state circuits letters 2020, Vol.3, p.426-429
Hauptverfasser: Kim, Myungjun, Cho, Seonghwan
Format: Artikel
Sprache:eng
Schlagworte:
Analog circuit
bandgap reference
Capacitance
CMOS
Energy gap
frequency compensation
Generators
Logic gates
low power
Poles and zeros
Power consumption
Resistors
temperature compensation
Transistors
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Zusammenfassung:In this letter, we propose a bandgap reference (BGR) with a single BJT branch and a PTAT-embedded amplifier with a cascode Miller frequency compensation. As implemented in 0.18- \mu \text{m} CMOS, the proposed BGR occupies a small area of 0.0082 mm 2 and low power consumption of 192 nW while achieving voltage spread ( \sigma /\mu ) of 0.33% and temperature coefficient of 26.3 ppm/°C over −40°C~140°C, without any trimming.
ISSN:2573-9603
2573-9603
DOI:10.1109/LSSC.2020.3025226