YBa/sub 2/Cu/sub 3/O/sub 7/ on Y-stabilized ZrO/sub 2/ buffered [100] Si-"T" resonator microwave characteristics

YBa/sub 2/Cu/sub 3/O/sub 7/ on Y-stabilized ZrO/sub 2/ buffered [100] Si-"T" resonator microwave characteristics

We have successfully fabricated high quality YBa/sub 2/Cu/sub 3/O/sub 7/ microwave "T" resonators on YSZ buffered P-type [100] oriented 53-56 /sup /spl Omega/-/cm silicon. The 40 to 50 nm thick yttria-stabilized zirconia buffer layer was deposited by pulsed dc magnetron sputtering at 830/s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on applied superconductivity 2001-03, Vol.11 (1), p.385-387
Hauptverfasser: Vlasov, Y.A., Vargas, J.M., Brown, P., Larkins, G.L.
Format: Artikel
Sprache:eng
Schlagworte:
Buffer layers
Laser ablation
Masers
Microwave measurements
Pulsed laser deposition
Silicon
Sputtering
Substrates
Superconducting magnets
Superconducting microwave devices
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We have successfully fabricated high quality YBa/sub 2/Cu/sub 3/O/sub 7/ microwave "T" resonators on YSZ buffered P-type [100] oriented 53-56 /sup /spl Omega/-/cm silicon. The 40 to 50 nm thick yttria-stabilized zirconia buffer layer was deposited by pulsed dc magnetron sputtering at 830/spl deg/C. The 250 to 400 nm thick YBa/sub 2/Cu/sub 3/O/sub 7/ film was deposited using laser ablation at 760/spl deg/C. Results include Q values in excess of 20,000 at 3.8 GHz on a coplanar "T" resonator at temperatures below 50 K.
ISSN:1051-8223
1558-2515
DOI:10.1109/77.919363