Achieving 26% triple junction cascade solar cell production

Achieving 26% triple junction cascade solar cell production

The performance of p-on-n triple junction solar cells (GaInPa/GaAs/Ge) has steadily improved. The highest cell efficiency measured to date is 27.0%, under 1 sun, AM0 illumination. The remaining power after 1E15 e/cm/sup 2/ 1 MeV electron irradiation is >82%. TECSTAR has also achieved very high pe...

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Bibliographische Detailangaben
Hauptverfasser: Chiang, P.K., Chu, C.L., Yeh, Y.C.M., Iles, H., Chen, G., Wei, J., Tsung, P., Olbinski, J., Krogen, J., Halbe, S., Khemthong, S., Ho, F.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Cities and towns
Diodes
Electrons
Gallium arsenide
Lighting
MOCVD
Photovoltaic cells
Production
Sun
Voltage
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Zusammenfassung:The performance of p-on-n triple junction solar cells (GaInPa/GaAs/Ge) has steadily improved. The highest cell efficiency measured to date is 27.0%, under 1 sun, AM0 illumination. The remaining power after 1E15 e/cm/sup 2/ 1 MeV electron irradiation is >82%. TECSTAR has also achieved very high performance n-on-p triple junction solar cells. The remaining power for n-on-p cells after 1E15 e/cm/sup 2/, 1 MeV electron irradiation is 85%. TECSTAR has also developed a bypass diode, grown monolithically during MOCVD growth of all the cell layers.
ISSN:0160-8371
DOI:10.1109/PVSC.2000.916055