An analysis of possibility of an ionizing radiation detector development on the base of a heterobipolar amplification element
An analysis of operation of an ionizing radiation detector on the base of the transistor heterostructure AlGaAs has been carried out. It has been shown that in such a detector there is a possibility to magnify a signal from one gamma quantum. A three-dimensional pattern of the electric field created...
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| creator | Ayzenshtat, G.I. Khan, A.V. Tolbanov, O.P. Mokeev, D.U. |
| description | An analysis of operation of an ionizing radiation detector on the base of the transistor heterostructure AlGaAs has been carried out. It has been shown that in such a detector there is a possibility to magnify a signal from one gamma quantum. A three-dimensional pattern of the electric field created by a bunch of non-equilibrium holes has been taking into account for the analysis. |
| doi_str_mv | 10.1109/APEIE.2000.913112 |
| format | Conference Proceeding |
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A three-dimensional pattern of the electric field created by a bunch of non-equilibrium holes has been taking into account for the analysis.</description><subject>Bipolar transistors</subject><subject>Charge carrier processes</subject><subject>Charge carriers</subject><subject>Current density</subject><subject>Electrons</subject><subject>Gamma ray detection</subject><subject>Gamma ray detectors</subject><subject>Ionizing radiation</subject><subject>Radiation detectors</subject><subject>Voltage</subject><isbn>9780780359031</isbn><isbn>0780359038</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2000</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9T8FqAjEQDRShRfcD2tP8QLeJu2ubo8iW9taDd5nVWR3JJiEJwgr-u7H2XBh4896b92CEeFayVErqt-VP-92WcyllqVWl1PxBFPr9Q-apGi0r9SiKGI_Zl3VTL_TiSVyWFtCiGSNHcD14FyN3bDiNN4oW2Fk-s91DwB1jyhR2lGibXMjLiYzzA9kEWU8Hgg4j_SbhkK-C69g7gwFw8IZ73t4byNAtNBOTHk2k4g-n4uWzXa--XpmINj7wgGHc3H-p_jWv7IZQWw</recordid><startdate>2000</startdate><enddate>2000</enddate><creator>Ayzenshtat, G.I.</creator><creator>Khan, A.V.</creator><creator>Tolbanov, O.P.</creator><creator>Mokeev, D.U.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>2000</creationdate><title>An analysis of possibility of an ionizing radiation detector development on the base of a heterobipolar amplification element</title><author>Ayzenshtat, G.I. ; Khan, A.V. ; Tolbanov, O.P. ; Mokeev, D.U.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_9131123</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2000</creationdate><topic>Bipolar transistors</topic><topic>Charge carrier processes</topic><topic>Charge carriers</topic><topic>Current density</topic><topic>Electrons</topic><topic>Gamma ray detection</topic><topic>Gamma ray detectors</topic><topic>Ionizing radiation</topic><topic>Radiation detectors</topic><topic>Voltage</topic><toplevel>online_resources</toplevel><creatorcontrib>Ayzenshtat, G.I.</creatorcontrib><creatorcontrib>Khan, A.V.</creatorcontrib><creatorcontrib>Tolbanov, O.P.</creatorcontrib><creatorcontrib>Mokeev, D.U.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Ayzenshtat, G.I.</au><au>Khan, A.V.</au><au>Tolbanov, O.P.</au><au>Mokeev, D.U.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>An analysis of possibility of an ionizing radiation detector development on the base of a heterobipolar amplification element</atitle><btitle>2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat</btitle><stitle>APEIE</stitle><date>2000</date><risdate>2000</risdate><spage>160</spage><epage>161</epage><pages>160-161</pages><isbn>9780780359031</isbn><isbn>0780359038</isbn><abstract>An analysis of operation of an ionizing radiation detector on the base of the transistor heterostructure AlGaAs has been carried out. It has been shown that in such a detector there is a possibility to magnify a signal from one gamma quantum. A three-dimensional pattern of the electric field created by a bunch of non-equilibrium holes has been taking into account for the analysis.</abstract><pub>IEEE</pub><doi>10.1109/APEIE.2000.913112</doi></addata></record> |
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| identifier | ISBN: 9780780359031 |
| ispartof | 2000 5th International Conference on Actual Problems of Electronic Instrument Engineering Proceedings. APEIE-2000. Devoted to the 50th Anniversary of Novosibirsk State Technical University. Vol.1 (Cat, 2000, p.160-161 |
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| language | eng |
| recordid | cdi_ieee_primary_913112 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Bipolar transistors Charge carrier processes Charge carriers Current density Electrons Gamma ray detection Gamma ray detectors Ionizing radiation Radiation detectors Voltage |
| title | An analysis of possibility of an ionizing radiation detector development on the base of a heterobipolar amplification element |
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