An analysis of possibility of an ionizing radiation detector development on the base of a heterobipolar amplification element

An analysis of possibility of an ionizing radiation detector development on the base of a heterobipolar amplification element

An analysis of operation of an ionizing radiation detector on the base of the transistor heterostructure AlGaAs has been carried out. It has been shown that in such a detector there is a possibility to magnify a signal from one gamma quantum. A three-dimensional pattern of the electric field created...

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Bibliographische Detailangaben
Hauptverfasser: Ayzenshtat, G.I., Khan, A.V., Tolbanov, O.P., Mokeev, D.U.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bipolar transistors
Charge carrier processes
Charge carriers
Current density
Electrons
Gamma ray detection
Gamma ray detectors
Ionizing radiation
Radiation detectors
Voltage
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Zusammenfassung:An analysis of operation of an ionizing radiation detector on the base of the transistor heterostructure AlGaAs has been carried out. It has been shown that in such a detector there is a possibility to magnify a signal from one gamma quantum. A three-dimensional pattern of the electric field created by a bunch of non-equilibrium holes has been taking into account for the analysis.
DOI:10.1109/APEIE.2000.913112