Evolution of relief of asperited polycrystalline silicon surface in the process of thermal oxidation

Evolution of relief of asperited polycrystalline silicon surface in the process of thermal oxidation

A simple phenomenological model of changing asperity surface, in the process of thermal oxidation of polycrystalline silicon, is examined. This allows to prognosticate and consequently deliberately change electrical characteristics of the dielectric layer.

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Bibliographische Detailangaben
Hauptverfasser: Perov, G.V., Salman, E.G., Ignatov, A.N.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aggregates
Conductivity
Dielectric films
Electric variables
Ellipsoids
Oxidation
Silicon compounds
Temperature
Thermal factors
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Beschreibung
Zusammenfassung:A simple phenomenological model of changing asperity surface, in the process of thermal oxidation of polycrystalline silicon, is examined. This allows to prognosticate and consequently deliberately change electrical characteristics of the dielectric layer.
DOI:10.1109/APEIE.2000.913080