FinFET-a quasi-planar double-gate MOSFET
The quasi-planar FinFET structure has device characteristics similar to those of the conventional MOSFET. Inserting FinFET into CMOS technology requires no change in circuit architecture or layout/design tools, providing a smooth transition to post-planar CMOS technology. 2D mixed-mode simulations s...
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| creator | Tang, S.H. Chang, L. Lindert, N. Yang-Kyu Choi Wen-Chin Lee Xuejue Huang Subramanian, V. Bokor, J. Tsu-Jae King Chenming Hu |
| description | The quasi-planar FinFET structure has device characteristics similar to those of the conventional MOSFET. Inserting FinFET into CMOS technology requires no change in circuit architecture or layout/design tools, providing a smooth transition to post-planar CMOS technology. 2D mixed-mode simulations show FinFET circuit performance exceeds that of advanced single gate MOSFETs. |
| doi_str_mv | 10.1109/ISSCC.2001.912568 |
| format | Conference Proceeding |
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| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0193-6530 |
| ispartof | 2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177), 2001, p.118-119 |
| issn | 0193-6530 2376-8606 |
| language | eng |
| recordid | cdi_ieee_primary_912568 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Capacitance Circuit simulation CMOS technology Dielectrics Electrodes FinFETs Leakage current Manufacturing processes Medical simulation MOSFET circuits |
| title | FinFET-a quasi-planar double-gate MOSFET |
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