FinFET-a quasi-planar double-gate MOSFET

FinFET-a quasi-planar double-gate MOSFET

The quasi-planar FinFET structure has device characteristics similar to those of the conventional MOSFET. Inserting FinFET into CMOS technology requires no change in circuit architecture or layout/design tools, providing a smooth transition to post-planar CMOS technology. 2D mixed-mode simulations s...

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Bibliographische Detailangaben
Hauptverfasser: Tang, S.H., Chang, L., Lindert, N., Yang-Kyu Choi, Wen-Chin Lee, Xuejue Huang, Subramanian, V., Bokor, J., Tsu-Jae King, Chenming Hu
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Circuit simulation
CMOS technology
Dielectrics
Electrodes
FinFETs
Leakage current
Manufacturing processes
Medical simulation
MOSFET circuits
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Beschreibung
Zusammenfassung:The quasi-planar FinFET structure has device characteristics similar to those of the conventional MOSFET. Inserting FinFET into CMOS technology requires no change in circuit architecture or layout/design tools, providing a smooth transition to post-planar CMOS technology. 2D mixed-mode simulations show FinFET circuit performance exceeds that of advanced single gate MOSFETs.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2001.912568