Design and Simulation of an RF Feedback Oscillator Circuit Using Conventional X-Parameters
This letter demonstrates for the first time the usefulness of the X-parameters under 50- \Omega load condition (conventional X-parameters) for simulating and designing RF feedback oscillator circuits. The measurement procedure to characterize a GaAs FET ATF34143 with conventional X-parameters is pr...
Gespeichert in:
Veröffentlicht in: | IEEE microwave and wireless components letters 2020-07, Vol.30 (7), p.685-688 |
---|---|
Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | This letter demonstrates for the first time the usefulness of the X-parameters under 50- \Omega load condition (conventional X-parameters) for simulating and designing RF feedback oscillator circuits. The measurement procedure to characterize a GaAs FET ATF34143 with conventional X-parameters is presented. The measured X-parameters' data are subsequently used in the design of an RF feedback oscillator at 2.47 GHz. The comparison of the experimental results with the harmonic balance simulations demonstrates the strengths and weakness that conventional X-parameters have to predict the electrical behavior of the feedback oscillator. |
---|---|
ISSN: | 1531-1309 2771-957X 1558-1764 2771-9588 |
DOI: | 10.1109/LMWC.2020.2996588 |