Design and Simulation of an RF Feedback Oscillator Circuit Using Conventional X-Parameters

This letter demonstrates for the first time the usefulness of the X-parameters under 50- \Omega load condition (conventional X-parameters) for simulating and designing RF feedback oscillator circuits. The measurement procedure to characterize a GaAs FET ATF34143 with conventional X-parameters is pr...

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Veröffentlicht in:IEEE microwave and wireless components letters 2020-07, Vol.30 (7), p.685-688
Hauptverfasser: Urbina-Martinez, J. L., Loo-Yau, J. R., Reynoso-Hernandez, J. Apolinar, Moreno, P.
Format: Artikel
Sprache:eng
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Zusammenfassung:This letter demonstrates for the first time the usefulness of the X-parameters under 50- \Omega load condition (conventional X-parameters) for simulating and designing RF feedback oscillator circuits. The measurement procedure to characterize a GaAs FET ATF34143 with conventional X-parameters is presented. The measured X-parameters' data are subsequently used in the design of an RF feedback oscillator at 2.47 GHz. The comparison of the experimental results with the harmonic balance simulations demonstrates the strengths and weakness that conventional X-parameters have to predict the electrical behavior of the feedback oscillator.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2020.2996588