High-Efficiency Reconfigurable Dual-Band Class-F Power Amplifier With Harmonic Control Network Using MEMS

This letter presents a novel reconfigurable, high-efficiency class-F power amplifier (PA) structure, using a commercial GaN-HEMT, that achieves dual-band configuration not only at the fundamental frequency but also at the harmonics. With a proper harmonic tuning structure, the need for an extra filtering section is eliminated, resulting in a high dual-band efficiency with a reduced number of components and size. The reconfigurable structure uses commercial single-pole-double-throw (SPDT) and single-pole-single-throw (SPST) MEMS switches optimally placed on the stubs to select between 900 and 1800 MHz. The reconfigurable PA achieves a measured power-added efficiency (PAE) of 69.5% and a power gain of 13.6 dB while delivering an output power of 39.1 dBm at 900 MHz. At 1800 MHz, the amplifier achieves a PAE of 57.9%, a power gain of 10.5 dB, and an output power of 38.5 dBm.